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Electroluminescent diode with nanocrystalline Si active layer prepared by pulsed-laser ablation in inert gas (Invited Paper)

Author(s):
  • Yoshida,T. ( Matsushita Research Institute Tokyo,Inc. (Japan) )
  • Yamada,Y. ( Matsushita Research Institute Tokyo,Inc. (Japan) )
  • Orii,T. ( Univ.of Tsukuba (Japan) )
Publication title:
Laser processing of materials and industrial applications II : 16-19 September 1998, Beijing, China
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3550
Pub. Year:
1998
Page(from):
169
Page(to):
176
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819430113 [0819430110]
Language:
English
Call no.:
P63600/3550
Type:
Conference Proceedings

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