Blank Cover Image

Formation of Germanides by Rapid Thermal Annealing and Their Applications in Advanced MOSFET Processes

Author(s):
Publication title:
Crucial issues in semiconductor materials and processing technologies
Title of ser.:
NATO ASI series. Series E, Applied sciences
Ser. no.:
222
Pub. Year:
1992
Page(from):
375
Page(to):
380
Pages:
6
Pub. info.:
Dordrecht: Kluwer Academic Publishers
ISSN:
0168132X
ISBN:
9780792320036 [0792320034]
Language:
English
Call no.:
N11482/222
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings SELF-ALIGNED FORMATION OF C54 TITANIUM GERMANOSILICIDE USING RAPID THERMAL PROCESSING AND APPLICATION TO RAISED, ULTRA-SHALLOW JUNCTIONS

Ashburn, Stanton P., Grider, Douglas T., Ozturk, Mehmet C., Harris, Gari, Maher, Dennis M.

MRS - Materials Research Society
7 Conference Proceedings Formation of Ultra-Shallow Junctions in Silicon by Rapid Thermal Vapor Phase Doping in an Ultrahigh Vacuum Rapid Thermal Processing System

O'Neil, Patricia A., Violette, Katherine E., Ozturk, Mehmet C., Ivanov, Igor C.

MRS - Materials Research Society
2 Conference Proceedings Rapid Thrmal Chemical Vapor Deposition of SixGe1-x Alloys in Advanced MOSFET Processes

Grider T. D., Ozturk C. M., Ashburn S., Sanganeria M., Wortman J. J.

Kluwer Academic Publishers
8 Conference Proceedings Novel Applications of Rapid Thermal Chemical Vapor Deposition for Nanoscale MOSFET's

Sturm, J. C., Yang, M., Chang, C. L., Carroll, M. S.

MRS - Materials Research Society
3 Conference Proceedings *RAPID THERMAL CHEMICAL VAPOR DEPOSITION OF GERMANIUM AND GERMANIUM/SILICON ALLOYS ON SILICON: NEW APPLICATIONS IN THE FABRICATION OF MOS TRANSISTORS

Ozturk, M. C., Grider, D. T., Ashburn, S. P., Sanganeria, M., Wortman, J. J.

Materials Research Society
9 Conference Proceedings CHARACTERIZATION OF LPCVD OF SILICON NITRIDE IN A RAPID THERMAL PROCESSOR

Johnson, Scott F., Miller, Roderick M., Ozturk, Mehmet C., Worman, Jimmie, J.

Materials Research Society
4 Conference Proceedings Formation and Morphology Evolution of Nickel Germanides on Ge (100) Under Rapid Thermal Annealing

Lee, K.Y., Liew, S.L., Chua, S.J., Chi, D.Z., Sun, H.P., Pan, X.Q.

Materials Research Society
10 Conference Proceedings EFFECTS OF RAPID THERMAL ANNEALS ON BORON IMPLANTED GaAs

Bowman Jr., R. C., Adams, P. M., Herman, M. H., Buttrill Jr., S. E.

Materials Research Society
5 Conference Proceedings Rapid Thermal Chemical Vapor Formation of TiSi2: An Alternative Refractory Metallization Process for Device Fabrication

Gladden, D. B., Ren, X., Weintraub, C. E., Ozturk, M. C.

MRS - Materials Research Society
11 Conference Proceedings Formation of Raised Source/Drain Junctions by Rapid Thermal Chemical Vapor Deposition

Ozturk, Mehmet C., Wortman, Jimmie J.

MRS - Materials Research Society
6 Conference Proceedings METAL-GERMANIUM CONTACTS AND GERMANIDE FORMATION

Marshall, E. D., Wu, C. S., Pai, C. S., Scott, D. M., Lau, S. S.

Materials Research Society
12 Conference Proceedings Silicide and Germanide Technology for Contacts and Metal Gates in MOSFET Applications

S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12