Measurement of Bonding Stress in Silicon High Power Device Structures by Infrared Photoelasticity Method

Measurement of Bonding Stress in Silicon High Power Device Structures by Infrared Photoelasticity Method

Author(s):

Publication title:

Materials reliability in microelectronics IX : symposium held April 6-8, 1999, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

563

Pub. Year:

1999

Page(from):

303

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994706 [155899470X]

Language:

English

Call no.:

M23500/563

Type:

Conference Proceedings

Details

TDL ID:	ZA00019385
Series ID:	PA00000011
Conf. info. (Name):	Symposium on materials reliability in microelectronics
Conf. info. (Number):	4th
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1999.04.06-1999.04.08

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