Enhancing the External Quantum Efficiency of Porous Silicon LEDs Beyond 1% by a Post-Anodization Electrochemical Oxidation

Enhancing the External Quantum Efficiency of Porous Silicon LEDs Beyond 1% by a Post-Anodization Electrochemical Oxidation

Author(s):

Publication title:

Microcrystalline and nanocrystalline semiconductors--1998 : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

536

Pub. Year:

1999

Page(from):

15

Pub. info.:

Warrendale, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994423 [1558994424]

Language:

English

Call no.:

M23500/536

Type:

Conference Proceedings

Details

TDL ID:	ZA00019383
Series ID:	PA00000011
Conf. info. (Name):	Symposium on microcrystalline and nanocrystalline semiconductors
Conf. info. (Number):	1998
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1998.11.30-1998.12.03

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