A Novel Low Temperature Self-Aligned Ti Silicide Technology for Sub-0.18ｦﾌm CMOS Devices

A Novel Low Temperature Self-Aligned Ti Silicide Technology for Sub-0.18ｦﾌm CMOS Devices

Author(s):

Publication title:

Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

525

Pub. Year:

1998

Page(from):

313

Pub. info.:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994317 [1558994319]

Language:

English

Call no.:

M23500/525

Type:

Conference Proceedings

Details

TDL ID:	ZA00019382
Series ID:	PA00000011
Conf. info. (Name):	Symposium on rapid thermal and integrated processing
Conf. info. (Number):	7th
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1998.04.13-1998.04.14

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