Blank Cover Image

A Comparison of MOS Devices with In Situ Boron Doped Polysilicon and Poly-SiGe Gates Deposited in an RTCVD System using Si2H6 and B2H6 Gas Mixture

Author(s):
Mirabedini, M. R.
Li, V. Z-Q.
Acker, A. R.
Kuehn, R. T.
Venables, D.
Ozturk, M. C.
Wortman, J. J.
2 more
Publication title:
Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
525
Pub. Year:
1998
Page(from):
207
Pub. info.:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994317 [1558994319]
Language:
English
Call no.:
M23500/525
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Modeling the Dependence of the Gate Current on Ge Content in Ultrathin Gate Dielectric PMOS Devices With Poly-Si1-xGex Gate Material

Shanware, A., Massoud, H. Z., Acker, A., Li, V. Z. Q., Mirabedini, M. R., Henson, K., Hauser, J. R., Wortman, J. J.

MRS - Materials Research Society
7 Conference Proceedings (6.2) 11:05 - 11:35 AM - Strain Relaxation in Narrow Width Strained Silicon Devices with Poly and Metal Gates (Invited)

Krivokapic, Z., Moroz, V., Smith, L., Xiang, Q., Lin, M. R. (AMD)

Electrochemical Society
2 Conference Proceedings Rapid Thermal Chemical Vapor Deposition of Polycrystalline Silicon-Germanium Films on SiO2 and Their Properties

Li, V. Z-Q, Mirabedini, M. R., Kuehn, R. T., Gladden, D., Batchelor, D., Christenson, K., Wortman, J. J., Ozturk, M. C., …

MRS - Materials Research Society
8 Conference Proceedings GATE QUALITY OXIDES PREPARED BY RAPID THERMAL CHEMICAL VAPOR DEPOSITION

Kuehn, R. T., Xu, X., Holcombe, D. J., Misra, V., Wortman, J. J., Hauser, J. R., Wang, Q. -F., Maher, D. M.

MRS - Materials Research Society
3 Conference Proceedings High Quality RTCVD Sidewall Spacer Dielectrics

Miles, D. S., Mirabedini, M. R., Venables, D., Wortman, J. J., Maher, D. M.

MRS - Materials Research Society
9 Conference Proceedings Comparison of Valence-Band Tunneling in Pure SiO2, Composite SiO2/Ta2O5, and Pure Ta2O5, in MOSFETs With 1.0 nm-Thick SiO2-Equivalent Gate Dielectrics

Shanware, A., Massoud, H. Z., Vogel, E., Henson, K., Hauser, J. R., Wortman, J. J.

MRS - Materials Research Society
4 Conference Proceedings Fabrication of high quality MOS devices for application in hazardous environments based on RTP gate dielectrics with in SITU RTCVD of polysilicon gates

Froschle, B., Bruemmer, H. P., Lang, W., Neumeier, K., Ramm, P.

MRS - Materials Research Society
10 Conference Proceedings Positron Beam Technique for the Study of Defects at the Si/SiO2 Interface of a Polysilicon Gated MOS System

Clement, M., Nijs, J. M. M. de, Schut, H., Veen, A. van, Mallee, R., Balk, P.

MRS - Materials Research Society
5 Conference Proceedings In Situ Boron-Doped Epitaxial Silicon Films Grown by UHV-RTCVD: Applications in Channel Engineering and Ultrashallow Junction Formation

Ban, I., Ozturk, M. C., Lee, K. L.

MRS - Materials Research Society
11 Conference Proceedings A COMPARISON OF LOW ENERGY BF2 IMPLANTATION IN Si AND Ge PREAMORPHIZED SILICON

Ruggles, Gary A., Hong, Shin-Nam, Wortman, Jimmie J., Ozturk, Mehmet, Myers, Edward R., Hren, John J., Fair, Richard B.

Materials Research Society
6 Conference Proceedings SUBMICRON p-CHANNEL MOS DEVICES WITH BORON DOPED POLYSILICON GATES FABRICATED BY RAPID THERMAL PROCESSING

Kugelmass, Sheldon M., Krusius, J. Peter

Materials Research Society
12 Conference Proceedings Influence of in-situ Boron Doping on the Surface Roughening of SiGe:B Films

R. Tsuchida, S. Mori, T. Sato, N. Uchitomi, I. Mizushima

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12