Blank Cover Image

Defect Reduction in Remote Plasma Deposited Silicon Nitride by Post-Deposition Rapid Thermal Annealing

Author(s):
Publication title:
Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
525
Pub. Year:
1998
Page(from):
187
Pub. info.:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994317 [1558994319]
Language:
English
Call no.:
M23500/525
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Deposition of Device-Quality Dielectric Thin Films by Remote Plasma-Enhanced Chemical-Vapor Deposition (RPECVD) and Rapid Thermal Annealing (RTA)

Lucovsky, G., Lu, Z., Lee, D.R.

American Institute of Chemical Engineers
7 Conference Proceedings RAPID THERMAL ANNEALING OF LOW TEMPERATURE SILICON DIOXIDE FILMS

Fitch, J. T., Lucovsky, G.

Materials Research Society
2 Conference Proceedings QUASI-STOICHIOMETRIC SILICON NITRIDE THIN FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION

Lucovsky, G., Ma, Y., He, S.S., Yasuda, T., Stephens, D.J., Habermehl, S.

Materials Research Society
8 Conference Proceedings Interfacial Properties of Si-Si3N4 Formed by Remote Plasma Enhanced Chemical Vapor Deposition

Misra, V., Lazar, H., Kulkarni, M., Wang, Z., Lucovsky, G., Hauser, J. R.

MRS - Materials Research Society
3 Conference Proceedings Bonded-H in Gate Dielectrics Deposited by Plasma Assisted Chemical Vapor Deposition and Subjected to Rapid Thermal Annealing

Lucovsky, G., Nimi, H., Koh, K.

MRS - Materials Research Society
9 Conference Proceedings DEPOSITION AND CHARACTERIZATION OF NEAR ‘INTRINSIC” μc-Si FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION -RPECVD

Williams, M.J., Wang, C., Lucovsky, G.

Materials Research Society
4 Conference Proceedings Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides and -Nitrides Formed by Plasma CVD

Banerjee, A., Lucovsky, G.

MRS - Materials Research Society
10 Conference Proceedings Cathodoluminescence Studies of Si-SiO2 Interfaces Prepared by Plasma-Assisted Oxidation and Subjected to Post-Oxidation Rapid Thermal Annealing

Schafer, J., Young, A. P., Brillson, L. J., Niimi, H., Lucovsky, G.

MRS - Materials Research Society
5 Conference Proceedings DEPOSITION OF HEAVILY-DOPED μc-SILICON THIN FILMS BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION PROCESS (remote PECVD)

Wang, C:, Bjorkman, C.H., Lee, D.R., Williams, M.J., Lucovsky, G.

Materials Research Society
11 Conference Proceedings Low-Temperature Remote-Plasma-Assisted Jet Vapor Deposition of Silicon Nitride

Veteran, J., Hobbs, C., Hegde, R., Tobin, P., Wang, V., Tseng, H., Kenig, G., Hartig, M., Tamagawa, T., Doran, R., …

MRS - Materials Research Society
6 Conference Proceedings Integrated Processing of Silicon Oxynitride Alloy Dielectrics by Plasma-Assisted Oxidation, Chemical Vapor Deposition, and On-Line Rapid Thermal Annealing

Hattangady, S. V., Niimi, H., Gandhi, S., Lucovsky, G.

MRS - Materials Research Society
12 Conference Proceedings *THE ELECTRICAL PROPERTIES OF SILICON OXIDE DEPOSITED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD)

Kim, Sang S., Tsu, D. V., Lucovsky, G.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12