Behavior of the Potential n-Type Dopants P and As in Diamond After Low-Dose Ion Implantation
- Author(s):
Hofsass, H. Dalmer, M. Restle, M. Ronning, C. Bharuth-Ram, K. Quintel, H. The Isolde-Collaboration - Publication title:
- Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 442
- Pub. Year:
- 1997
- Page(from):
- 675
- Pub. info.:
- Pittsburgh, Penn: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993464 [1558993460]
- Language:
- English
- Call no.:
- M23500/442
- Type:
- Conference Proceedings
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