Electrical Characterization of Nitrogen Acceptors in p-ZnSe/p-GaAs Grown by Molecular-Beam Epitaxy

Electrical Characterization of Nitrogen Acceptors in p-ZnSe/p-GaAs Grown by Molecular-Beam Epitaxy

Author(s):

Publication title:

Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

442

Pub. Year:

1997

Page(from):

573

Pub. info.:

Pittsburgh, Penn: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993464 [1558993460]

Language:

English

Call no.:

M23500/442

Type:

Conference Proceedings

Details

TDL ID:	ZA00019374
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defects in electronic materials
Conf. info. (Number):	2nd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1996.12.02-1996.12.06

Similar Items:

1 Conference Proceedings Interface defects and their effect on the electrical properties of ZnSe/GaAs heterojunctions grown by MBE Seghier,D., Hauksson,I.S., Gislason,H.P., Prior,K.A., Cavenett,B.C. Trans Tech Publications	7 Conference Proceedings Characterization of Low-Temperature-Grown Molecular-Beam Epitaxy GaAS Look, D.C. Electrochemical Society
2 Conference Proceedings Effects of copper diffusion on the native defect EL2 in GaAs Seghier,D., Gislason,H.P. Trans Tech Publications	8 Conference Proceedings Acceptor-Doping in ZnS/GaAs Grown by Means of the Post-Heated Molecular Beam Epitaxy Saito,H., Yoneta,M., Ohishi,M., Kobashi,H., Hatano,C., Kitani,K. Trans Tech Publications
3 Conference Proceedings Hydrogenation of Undoped and Nitrogen-Doped CdTe and ZnSe Grown by Molecular-Beam Epitaxy Hirsch, L. S., Setzler, S. D., Ptak, A. J., Giles, N. C., Myers, T. H. MRS - Materials Research Society	9 Conference Proceedings Anisotropic Lattice Relaxation and its Mechanism of ZnSe Epilayer Grown on (001) GaAs Substrate by Molecular Beam Epitaxy Kim, C. S., Noh, S. K., Lee, H. J., Cho, Y. K., Kim, Y. I., Park, H. S., Kim, T. I. MRS - Materials Research Society
4 Conference Proceedings Deep Level Characterization of Interface-Engineered ZnSe Layers Grown by Molecular Beam Epitaxy on GaAs Hierro, A., Kwon, D., Ringel, S. A., Brillson, L. J., Young, A. P., Franciosi, A. MRS - Materials Research Society	10 Conference Proceedings TIN-DOPING INDUCED DEFECTS IN GaAs FILSM GROWN BY MOLECULAR BEAM EPITAXY Chen, S. H., Enquist, P., Carter, C. B. Materials Research Society
5 Conference Proceedings Study of hole traps in p-type ZnSe and ZnSSe epilayers by DLTS and admittance spectroscopy Hauksson,I.J., Seghier,D., Gislason,H.P., Prior,K.A., Cavenett,B.C. Trans Tech Publications	11 Conference Proceedings Evidence for Noncorrelation Between the 0.15 eV and 0.44 eV Cu-Related Acceptor Levels GaAs Leosson, K., Gislason, H. P. MRS - Materials Research Society
6 Conference Proceedings ELECTRICAL PROPERTIES OF HEAVILY Be-DOED GaAs GROWN BY MOLECULAR BEAM EPITAXY Shibata, H., Makita, Y., Yamada, A., Ohnishi, N., Mori, M., Nakayama, Y., Beye, A.C., Mayer, K.M., Takahashi, T., … Materials Research Society	12 Conference Proceedings MOLECULAR BEAM EPITAXY OF LOW TEMPERATURE GROWN GaAs PHOTOCONDUCTORS Dykaar, D.R., Eaglesham, D.J., Keil, U.D., Greene, B.I., Saeta, P.N., Pfeiffer, L.N., Kopf, R.F., Darack, S.B., West, … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12