Shallow Donor Formation in Hydrogen-Implanted Silicon

Shallow Donor Formation in Hydrogen-Implanted Silicon

Author(s):

Publication title:

Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

442

Pub. Year:

1997

Page(from):

205

Pub. info.:

Pittsburgh, Penn: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993464 [1558993460]

Language:

English

Call no.:

M23500/442

Type:

Conference Proceedings

Details

TDL ID:	ZA00019374
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defects in electronic materials
Conf. info. (Number):	2nd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1996.12.02-1996.12.06

Similar Items:

1 Conference Proceedings Partial Annealing Of Defects In Boron-Implanted P-Type Silicon By Hydrogen Implantation Tokuda, Yutaka, Iwata, Hiroyuki Materials Research Society	7 Conference Proceedings DEPTH PROFILES OF THERMAL DONORS IN CZOCHRALSKI-GROWN n-TYPE SILICON Tokuda, Yutaka, Shimokata, Toshihisa, Katayama, Masayuki, Hattori, Tadashi Materials Research Society
2 Conference Proceedings Effects of H+-Implantation on Electron Traps in n-Type Si Induced by P+ Preimplantation Ito, Akira, Iwata, Hiroyuki, Tokuda, Yutaka MRS - Materials Research Society	8 Conference Proceedings STUDY OF ELECRICAL PROPERTIES OF DEFECTS IN SOI FILMS BY WAFER BONDING Usami, Akira, Natori, Taichi, Ito, Akira, Ishigami, Shun-Ichiro, Tokuda, Yutaka, Wada, Takao Materials Research Society
3 Conference Proceedings Formation of Hydrogen-Related Traps in Electron-Irradiated n-Type Silicon by Wet Chemical Etching Tokuda, Yutaka, Shimada, Hitoshi MRS - Materials Research Society	9 Conference Proceedings Activation of Implanted Phosphorus Ions into Silicon by Followed Hydrogen Ion Implantations Hasebe, Y., Ohshima, H., Hattori, T., Usami, A., Tokuda, Y. MRS - Materials Research Society
4 Conference Proceedings STUDIES OF OXYGEN INTRODUCED DURING THERMAL OXIDATION AND DEFECTS INDUCED BY RAPID THERMAL ANNEALING IN SILICON EPITAXIAL LAYERS Usami, Akira, Natori, taichi, Ito, Akira, Sugiyama, Takahide, Hirota, Seiya, Tokuda, Yutaka, Wada, Takao Materials Research Society	10 Conference Proceedings STUDY OF MEDIUM-DEEP TRAPS IN UNDOPED GaAs GROWN BY ARSENIC-PRESSURE CONTROLLED CZ METHOD Shiraki, Hiroyuki, Tokuda, Yutaka, Sassa, Koichi Materials Research Society
5 Conference Proceedings DLTS Studies of Defects Produced in n-Type Silicon by Hydrogen Implantation at Low Temperature Sugiyama, Takahide, Ishiko, Masayasu, Kanazawa, Shigeki, Tokuda, Yutaka Materials Research Society	11 Conference Proceedings Interaction Between EL5 and EL6 in Bulk GaAs Shiraki, Hiroyuki, Tokuda, Yutaka, Sassa, Koichi MRS - Materials Research Society
6 Conference Proceedings RAPID-THERMAL-PROCESSING INDUCED DEEP LEVEL TRAPS AND THEIR SPATIAL DISTRIBUTION IN MBE GaAs Kitagawa, Akio, Tokuda, Yutaka, Usami, Akira, Wada, Takao, Kano, Hiroyuki Materials Research Society	12 Conference Proceedings Donor Behavior of Implanted Hydrogen Ions in Silicon Wafers Barakel, Damien, Martinuzzi, Santo Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12