Blank Cover Image

Behavior of Point Defects in CZ Silicon Crystal Growth - Formation of Polyhedral Cavities and Oxidation-Induced Stacking Fault Nuclei

Author(s):
Publication title:
Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
442
Pub. Year:
1997
Page(from):
131
Pub. info.:
Pittsburgh, Penn: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993464 [1558993460]
Language:
English
Call no.:
M23500/442
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Point Defect Generation by the Stress Due to Impurity Doping in Silicon Crystal

Kikuchi, M., Tanahashi, K., Inoue, N.

Electrochemical Society
7 Conference Proceedings The Formation of Defects Degrading Gate Oxide Integrity During CZ-Si Crystal Growth

Tsumori, Y., Nakai, K., Iwasaki, T., Haga, H., Kojima, K., Nakashizu, T.

MRS - Materials Research Society
2 Conference Proceedings Nucleation of Void Defects in Cz Silicon

Yamanaka, Y., Tanahashi, K., Mikayama, T., Inoue, N., Mon, A.

Electrochemical Society
8 Conference Proceedings OXYGEN STACKING FAULT PATTERNS IN CZ SILICON CRYSTAL GROWTH

Shaffner, T.J.

Electrochemical Society
3 Conference Proceedings Nucleation of Void Defects in Cz Silicon

Yamanaka,Y., Tanahashi,K., Mikayama,T., Inoue,N., Mori,A.

Electrochemical Society, SPIE-The International Society for Optical Engineering
9 Conference Proceedings SIMULATION OF THE POINT DEFECT DIFFUSIONAND GROWTH CONDITION FOR DEFECT FREE CZ SILICON CRYSTAL

Nakamura, K., Saishoji, T., Tomioka, J.

Electrochemical Society
4 Conference Proceedings *PRECIPITATION OF OXYGEN AND THE MECHANISH OF STACKING FAULT FORMATION IN CZOCHRALSKI SILICON BULK CRYSTALS,

Wada, K., Inoue, N., Osaka, J.

North-Holland
10 Conference Proceedings SIMULATION OF THE POINT DEFECT DIFFUSIONAND GROWTH CONDITION FOR DEFECT FREE CZ SILICON CRYSTAL

Nakamura, K., Saishoji, T., Tomioka, J.

Electrochemical Society
5 Conference Proceedings Generation of Oxidation Induced Stacking Faults in CZ Silicon Wafers

Sueoka,K., Akatsuka,M., Nishihara,K., Yamamoto,T., Kobayashi,S.

Trans Tech Publications
11 Conference Proceedings STUDY OF THE STACKING FAULT NUCLEI GENERATION/ DISSOLUTION TEMPERATURES ON CZ SILICON WAFERS AND ITS DEPENDENCE ON THE CRYSTAL POSITION

Porrini, M., Borionetti, G., Ferrero, G.

Electrochemical Society
6 Conference Proceedings Two-dimensional model of the intrinsic point defects behavior during Cz silicon crystal growth

Prostomolotov,A.I., Verezub,N.A.

SPIE-The International Society for Optical Engineering
12 Conference Proceedings On the Nucleation and Growth of Bulk Stacking Faults in Cz Silicon

Vanhellemont, J., De Gryse, O., Clauws, P.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12