Excitation Properties of Er-Doped GaP from Photoluminescence and High Pressure Studies

Excitation Properties of Er-Doped GaP from Photoluminescence and High Pressure Studies

Author(s):

Publication title:

Rare earth doped semiconductors II : symposium held April 8-10, 1996, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

422

Pub. Year:

1996

Page(from):

279

Pub. info.:

Pittsburgh: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993259 [1558993258]

Language:

English

Call no.:

M23500/422

Type:

Conference Proceedings

Details

TDL ID:	ZA00019372
Series ID:	PA00000011
Conf. info. (Name):	Symposium on rare earth doped semiconductors
Conf. info. (Number):	2nd
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1996.04.08-1996.04.10

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