Effect of Via Etch Profile and Barrier Metal on Electromigration Performance of W-Filler Via Structure in TiN/AlCu/TiN Metallization

Effect of Via Etch Profile and Barrier Metal on Electromigration Performance of W-Filler Via Structure in TiN/AlCu/TiN Metallization

Author(s):

Ting, Larry M.

Publication title:

Materials reliability in microelectronics V : symposium held April 17-21, 1995, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

391

Pub. Year:

1995

Page(from):

453

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992948 [1558992944]

Language:

English

Call no.:

M23500/391

Type:

Conference Proceedings

Details

TDL ID:	ZA00019370
Series ID:	PA00000011
Conf. info. (Name):	Symposium on materials reliability in microelectronics
Conf. info. (Number):	5th
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1995.04.17-1995.04.21

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