ROOM TEMPERATURE DAMAGE, ANNEALING AND DISLOCATION GROWTH IN SILICON
- Author(s):
- Publication title:
- Microstructure of irradiated materials : Symposium held November 29-1 December, 1994, Boston, Massachusetts USA
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 373
- Pub. Year:
- 1995
- Page(from):
- 469
- Pub. info.:
- Pittsburgh, Pa: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992757 [1558992758]
- Language:
- English
- Call no.:
- M23500/373
- Type:
- Conference Proceedings
Similar Items:
MRS - Materials Research Society |
7
Conference Proceedings
FLUX DEPENDANCE OF AMORPHOUS LAYER FORMATION AND DAMAGE ANNEALING IN ROOM TEMPERATURE IMPLANTATION OF BORON INTO SILICON
MRS - Materials Research Society |
Kluwer Academic Publishers |
Materials Research Society |
Trans Tech Publications |
Electrochemical Society |
Electrochemical Society |
10
Conference Proceedings
Radiation damage measurements in room-temperature semiconductor radiation detectors
SPIE - The International Society for Optical Engineering |
5
Conference Proceedings
Dislocation nucleation, growth and suppression during CW laser annealing of silicon
North Holland |
MRS - Materials Research Society |
North-Holland |
MRS - Materials Research Society |