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EPITAXIAL GROWTH AND CHARACTERIZATION OF THE ORDERED VACANCY COMPOUND CuIn3Se5 ON GaAs(100) FABRICATED BY MOLECULAR BEAM EPITAXY

Author(s):
Publication title:
Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
340
Pub. Year:
1994
Page(from):
599
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992405 [1558992405]
Language:
English
Call no.:
M23500/340
Type:
Conference Proceedings

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