THE RELATIONSHIP BETWEEN InGaAs CHANNEL LAYER THICKNESS AND DEVICE PERFORMANCE IN HIGH ELECTRON MOBILITY TRANSISTORS

THE RELATIONSHIP BETWEEN InGaAs CHANNEL LAYER THICKNESS AND DEVICE PERFORMANCE IN HIGH ELECTRON MOBILITY TRANSISTORS

Author(s):

Meshkinpour, M.

Publication title:

Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

340

Pub. Year:

1994

Page(from):

327

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992405 [1558992405]

Language:

English

Call no.:

M23500/340

Type:

Conference Proceedings

Details

TDL ID:	ZA00019366
Series ID:	PA00000011
Conf. info. (Name):	Symposium on compound semiconductor epitaxy
Conf. info. (Number):	1994
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1994.04.04-1994.04.07

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