DOPANT AND As4/Ga FLUX RATIO INFLUENCE ON THE ELECTRICAL AND STRUCTURAL PROPERTIES OF LT GaAs

DOPANT AND As4/Ga FLUX RATIO INFLUENCE ON THE ELECTRICAL AND STRUCTURAL PROPERTIES OF LT GaAs

Author(s):

Publication title:

Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

340

Pub. Year:

1994

Page(from):

295

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992405 [1558992405]

Language:

English

Call no.:

M23500/340

Type:

Conference Proceedings

Details

TDL ID:	ZA00019366
Series ID:	PA00000011
Conf. info. (Name):	Symposium on compound semiconductor epitaxy
Conf. info. (Number):	1994
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1994.04.04-1994.04.07

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