Blank Cover Image

Strained multiple-quantum-well lasers grown on GaSb emitting between 2 and 2.4ｦﾌm

Author(s):
Publication title:
Integrated Optics Devices: Potential for Commercialization
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
2997
Pub. Year:
1997
Page(from):
2
Page(to):
13
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819424082 [0819424080]
Language:
English
Call no.:
P63600/2997
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Mid-infrared GaSb-InAs-based multiple quantum well lasers (Invited Paper)

Baranov,A.N., Bertru,N., Cuminal,Y., Boisser,G., Rouillard,Y., Nicolas,J.-C., Grech,P., Joullie,A.F., Alibert,C.L.

SPIE-The International Society for Optical Engineering
7 Conference Proceedings Fully planar ion-implanted 0.98 ｦﾌm strained quantum well laser

Hobson, W. S., Pearton, S. J., Ren, F., Chu, S. N. G., Bylsma, R., Elliman, R. G.

MRS - Materials Research Society
2 Conference Proceedings AIGaAsSb/InGaAsSb/GaSb quantum well lasers with separate-confinement heterostructures for 2-ｦﾌm operation

Garbuzov,D.Z., Lee,H., York,P.K., Menna,R.J., Martinelli,R.U., DiMarco,L.A., Narayan,S., Capewell,D.R., Connolly,J.C.

SPIE-The International Society for Optical Engineering
8 Conference Proceedings InAsSb/InAlAsSb Quantum-Well Diode Lasers Emitting Between 3 and 4 ｦﾌm

Turner, G. W., Choi, H. K., Manfra, M. J., Connors, M. K.

MRS - Materials Research Society
3 Conference Proceedings Low-threshold high-power high-brightness GaInAsSb/AlGaAsSb quantum well lasers emitting at 2.05ｦﾌm

Choi,H.K., Turner,G.W., Walpole,J.N., Manfra,M.J., Connors,M.K., Missaggia,L.J.

SPIE-The International Society for Optical Engineering
9 Conference Proceedings 1.3-ｦﾌm InGaAsP/InP strained-layer multiple quantum well complex-coupled distributed feedback laser

Chen,B., Wang,W., Wang,X., Zhang,J., Zhu,H., Zhou,F.

SPIE-The International Society for Optical Engineering
4 Conference Proceedings High-power,high-efficiency,and highly uniform 1.3-ｦﾌm uncooled InGaAsP/InP strained multiquantum-well lasers

Kojima,K., Focht,M.W., Freund,J.M., Geary,J.M., Glogovsky,K.G., Guth,G.D., Karlicek,R.F., Luther,L.C., Przybylek,G.J., …

SPIE-The International Society for Optical Engineering
10 Conference Proceedings Low-Loss, Broadened-Waveguide, High-Power 2-ｦﾌm AlGaAsSb/InGaAsSb/GaSb Separate Confinement Quantum-Well Lasers

Menna, R. J., Garbuzov, D. Z., Martinelli, R. U., Lee, H., York, P. K., Connolly, J. C., Narayan, S. Y.

MRS - Materials Research Society
5 Conference Proceedings InAsSb/InAIAsSb quantum well diode lasers emitting beyond 3 ｦﾌm

Choi,H.K., Turner,G.W., Manfra,M.J., Connors,M.K., Herrmann,F.P., Baliga,A., Anderson,N.G.

SPIE-The International Society for Optical Engineering
11 Conference Proceedings Advanced GaSb/InGaAsSb/ALGaAsSb 2-2.4ｦﾌm photovoltaic detectors

Piotrowski, T. T., Piotrowska, A., Kaminska, E., Golaszewska, K., Papis, E., Piskorski, M., Jung, W., Katcki, J., Kudla, …

MRS-Materials Research Society
6 Conference Proceedings High-performance 1.3-and 1.55-ｦﾌm InGaAsP/InP strained-layer quantum well lasers grown by LP-MOCVD

Ma,X., Wang,S., Xiong,F., Guo,L., Wang,Z., Wang,L., Zhang,X., Sun,G., Xia,C., Zhu,T., Yang,Y., Zhang,H., He,G., Yao,S., …

SPIE-The International Society for Optical Engineering
12 Conference Proceedings Continuous-wave quantum cascade lasers in the 4-to 10-ｦﾌm wavelength region

Faist,J., Capasso,F., Sirtori,C., Sivco,D.L., Hutchinson,A.L., Chu,S.-N.G., Cho,A.Y.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12