Bilayer resist approach for 193-nm lithography

Bilayer resist approach for 193-nm lithography

Author(s):

Publication title:

Advances in resist technology and processing XIII : 11-13 March 1996, San Clara, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

2724

Pub. Year:

1996

Page(from):

344

Page(to):

354

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819421005 [0819421006]

Language:

English

Call no.:

P63600/2724

Type:

Conference Proceedings

Details

TDL ID:	ZA00019331
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in Resist Technology and Processing
Conf. info. (Number):	1996 : 13th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	1996.03.11-1996.03.13

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