Defect reactions in low temperature electron irradiated AlAS investigated by measurements of the lattice parameter

Defect reactions in low temperature electron irradiated AlAS investigated by measurements of the lattice parameter

Author(s):

Publication title:

Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997

Title of ser.:

Materials science forum

Ser. no.:

258-263

Pub. Year:

1997

Vol.:

Part2

Page(from):

1253

Page(to):

1258

Pub. info.:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497881 [0878497889]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00019291
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects in Semiconductors : ICDS
Conf. info. (Number):	19th
Conf. info. (Venue):	Aveiro, Portugal
Conf. info. (Date):	1997.07.00

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