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Impact of radiation-induced defects on the yellow luminescence in MOCVD GaN

Author(s):
Emtsev,V.V.
Davydov,V.Yu.
Goncharuk,I.N.
Kalinina,E.V.
Kozlovskii,V.V.
Poloskin,D.S.
Sakharov,A.V.
Shmidt,N.M.
Smimov,A.N.
Usikov,A.S.
5 more
Publication title:
Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
Title of ser.:
Materials science forum
Ser. no.:
258-263
Pub. Year:
1997
Vol.:
Part2
Page(from):
1143
Page(to):
1148
Pub. info.:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497881 [0878497889]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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