Electrical activity and diffusion of shallow acceptors in III-V semiconductors
- Author(s):
- Publication title:
- Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991
- Title of ser.:
- Materials science forum
- Ser. no.:
- 83-87
- Pub. Year:
- 1992
- Vol.:
- Pt.2
- Page(from):
- 941
- Page(to):
- 946
- Pub. info.:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878496280 [0878496289]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
INVESTIGATION OF METAL/GaAs REACTIONS BY HEAVY ION RUTHERFORD BACKSCATTERING SPECTROMETRY (HIRBS)
Materials Research Society |
SPIE - The International Society for Optical Engineering |
2
Conference Proceedings
THE EFFECT OF Co-IMPLANTATION ON THE ELECTRICAL ACTIVITY OF IMPLANTED CARBON IN GaAs
Materials Research Society |
8
Conference Proceedings
Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN
Materials Research Society |
Materials Research Society |
9
Conference Proceedings
EXAFS ANALYSIS OF DILUTE MAGNETIC SEMICONDUCTOR THIN FILMS SYNTHESIZED BY THE ION BEAM TECHNIQUE
MRS - Materials Research Society |
Materials Research Society |
Materials Research Society |
SPIE - The International Society of Optical Engineering |
Trans Tech Publications |
6
Conference Proceedings
Electric Field Broadening of Gallium Acceptor States in Compensated Ge:Ga,As
Trans Tech Publications |
12
Conference Proceedings
THE EFFECTS OF AMORPHOUS LAYER REGROWTH ON CARBON ACTIVATION IN GaAs AND InP
MRS - Materials Research Society |