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Dopant enhancement of the 1.54ヲフm emission of erbium implanted in silicon

Author(s):
Michel,J.
Kimerling,L.C.
Benton,J.L.
Eaglesham,D.J.
Fitzgerald,E.A.
Jacobson,D.C.
Poate,J.M.
Xie,Y.-H.
Fer-rante,R.F.
4 more
Publication title:
Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991
Title of ser.:
Materials science forum
Ser. no.:
83-87
Pub. Year:
1992
Vol.:
Pt.2
Page(from):
653
Page(to):
658
Pub. info.:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496280 [0878496289]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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