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Hydrogen passivation of shallow and deep centers in GaSb

Author(s):
Polyakov,A.Y.
Pearton,S.J.
Wilson,R.G.
Rai-Choudhury,P.
Hillard,R.J.
Bao,X.J.
Stam,M.
Milnes,A.G.
Schlesinger,T.E.
4 more
Publication title:
Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991
Title of ser.:
Materials science forum
Ser. no.:
83-87
Pub. Year:
1992
Vol.:
Pt.2
Page(from):
623
Page(to):
628
Pub. info.:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496280 [0878496289]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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