Charge collection characterization of polycrystalline n-GaAs layers for solar cells

Charge collection characterization of polycrystalline n-GaAs layers for solar cells

Author(s):

Paz, O. ( IBM East Fishkill, General Technology Division )
Bhat, K.N. ( Electrical and Systems Eng. Dept., Rensselaer Polytechnic Institute )
Borrego, J.M. ( Electrical and Systems Eng. Dept., Rensselaer Polytechnic Institute )

Publication title:

Grain boundaries in semiconductors : proceedings of the Materials Research Society annual meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposia proceedings

Ser. no.:

5

Pub. Year:

1982

Page(from):

223

Page(to):

228

Pub. info.:

New York: North-Holland

ISSN:

02729172

ISBN:

9780444006974 [0444006974]

Language:

English

Call no.:

M23500/5

Type:

Conference Proceedings

Details

TDL ID:	ZA00019226
Series ID:	PA00000010
Conf. info. (Name):	Materials Research Society Annual Meeting ; Symposium on grain boundaries in semiconductors
Conf. info. (Number):	1981
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1981.11.16-1981.11.19

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