Imaging contrast improvement for 160-nm line features using subresolution assist features with binary,six percent ternary attenuated phase-shift mask with process-tuned resist

Imaging contrast improvement for 160-nm line features using subresolution assist features with binary,six percent ternary attenuated phase-shift mask with process-tuned resist

Author(s):

Publication title:

Optical microlithography XII : 17-19 March 1999, Santa Clara, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3679

Pub. Year:

1999

Vol.:

Part1

Page(from):

55

Page(to):

67

Pub. info.:

Bellingham, Wash., USA: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819431530 [0819431532]

Language:

English

Call no.:

P63600/3679

Type:

Conference Proceedings

Details

TDL ID:	ZA00019002
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Optical microlithography
Conf. info. (Number):	1999 : 12th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	1999.03.17-1999.03.19

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