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193-nm thin-layer imaging performance of 140-nm contact hole patterning and DOE dry development process optimization of multilayer resist process

Author(s):
Publication title:
Advances in resist technology and processing XVII : 28 February - 1 March 2000, Santa Clara, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3999
Pub. Year:
2000
Vol.:
Part2
Page(from):
1028
Page(to):
1045
Pub. info.:
Bellingham, Wash.: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819436177 [0819436178]
Language:
English
Call no.:
P63600/3999
Type:
Conference Proceedings

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