Effect of acid labile ether protecting groups on the oxide etch resistance and lithographic performance of 248-nm resists

Effect of acid labile ether protecting groups on the oxide etch resistance and lithographic performance of 248-nm resists

Author(s):

Varanasi,P.R. ( IBM Microelectronics Div. )
Cornett,K.M.
Lawson,M.C.

Publication title:

Advances in resist technology and processing XVII : 28 February - 1 March 2000, Santa Clara, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3999

Pub. Year:

2000

Vol.:

Part1

Page(from):

322

Page(to):

327

Pub. info.:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819436177 [0819436178]

Language:

English

Call no.:

P63600/3999

Type:

Conference Proceedings

Details

TDL ID:	ZA00018975
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in resist technology and processing
Conf. info. (Number):	2000 : 17th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	2000.02.28-2000.03.01

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