Pattern collapse in high-aspect-ratio DUV and 193-nm resists

Pattern collapse in high-aspect-ratio DUV and 193-nm resists

Author(s):

Domke,W.D. ( International SEMATECH )

Publication title:

Advances in resist technology and processing XVII : 28 February - 1 March 2000, Santa Clara, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3999

Pub. Year:

2000

Vol.:

Part1

Page(from):

313

Page(to):

321

Pub. info.:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819436177 [0819436178]

Language:

English

Call no.:

P63600/3999

Type:

Conference Proceedings

Details

TDL ID:	ZA00018975
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in resist technology and processing
Conf. info. (Number):	2000 : 17th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	2000.02.28-2000.03.01

Similar Items:

1 Conference Proceedings Collapse behavior of single layer 193 and 157-nm resists: use of surfactants in the rinse to realize the sub-130-nm nodes Hien, S., Rich, G.K., Molina, G., Cao, H.B., Nealey, P.F. SPIE-The International Society for Optical Engineering	7 Conference Proceedings Patterning with 193 nm Resists Bakshi, V., Smith, G., Alzaben, T., Beach, J., Spurlock, K., Berger., R., Dorris, S.-T.L., Holladay, D., Woehl, J. Electrochemical Society
2 Conference Proceedings 193-nm thin-layer imaging performance of 140-nm contact hole patterning and DOE dry development process optimization of multilayer resist process Kim,W.D., Hwang,S.B., Rich,G.K., Graffenberg,V.L. SPIE - The International Society for Optical Engineering	8 Conference Proceedings 193-nm negative resist based on acid-catalyzed elimination of polar molecules Sooriyakumaran, R., Davis, B.W., Larson, C.E., Brock, P.J., DiPietro, R.A., Wallow, T.I., Connor, E.F., Sundberg, L.K., … SPIE - The International Society of Optical Engineering
3 Conference Proceedings 193-nm photoresists at 130-nm node:which lithographic performances for which chemical platform? Amblard,G.R., Byers,J.D., Domke,W.D., Rich,G.K., Graffenberg,V.L., Patel,S., Miller,D.A., Perez,G.B. SPIE - The International Society for Optical Engineering	9 Conference Proceedings Materials screening for attenuating embedded phase-shift photoblanks for DUV and 193-nm photolithography Carcia,P.F., French,R.H., Sharp,K.G., Meth,J.S., Smith,B.W. SPIE-The International Society for Optical Engineering
4 Conference Proceedings Optimization of etch conditions for a silicon-containing methacrylate-based bilayer resist for 193-nm lithography Steinhausler,T., Gabor,A.H., White,D., Blakeney,A.J., Stark,D.R., Miller,D.A., Rich,G.K., Graffenberg,V.L., Dean,K.R. SPIE-The International Society for Optical Engineering	10 Conference Proceedings Characterization of outgassing for EUV technology Thirumala, V., Cao, H.B., Yueh, W., Choi, H., Golovkina, V., Wallace, J., Nealey, P.F., Thielman, D., Cerrina, F. SPIE - The International Society of Optical Engineering
5 Conference Proceedings Effects of airborne molecular contamination on 157-nm resists: AMC friend or foe? Meute, J.J., Rich, G., Turnquest, K., Dean, K., Patel, S., Graffenberg, V.L., Rodriguez, M.P. SPIE - The International Society of Optical Engineering	11 Conference Proceedings Optical extension at the 193-nm wavelength Zandbergen,P., McCallum,M., Amblard,G.R., Domke,W.-D., Smith,B .W., Zavyalova,L., Petersen,J.S. SPIE - The International Society for Optical Engineering
6 Conference Proceedings High-resolution patterning in chemically amplified resists: the effect of film thickness Medeiros,D.R., Moreau,W.M., Petrillo,K.E., Chauhan,M., Huang,W.-S., Magg,C., Goldfarb,D., Angelopoulos,M., Nealey,P.F. SPIE-The International Society for Optical Engineering	12 Conference Proceedings Organoelement resists for EUV lithography Dai, J., Ober, C.K., Wang, L., Cerrina, F., Nealey, P.F. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12