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The influence of spontaneous and piezoelectric polarization on novel AlGaN/GaN/InGaN device structures

Author(s):
Foutz, B. E.
Murphy, M. J.
Ambacher, O.
Tilak, V.
Smart, J. A.
Shealy, J. R.
Schaff, W. J.
Eastman, L. F.
3 more
Publication title:
Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
572
Pub. Year:
1999
Page(from):
501
Pub. info.:
Warrendale, PA: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558994799 [1558994793]
Language:
English
Call no.:
M23500/572
Type:
Conference Proceedings

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