Blank Cover Image

Time resolved photoluminescence of cubic Mg doped GaN

Author(s):
Seitz, R.
Gaspar, C.
Monteiro, T.
Pereira, E.
Schoettker, B.
Frey, T.
As, D. J.
Schikora, D.
Lischka, K.
4 more
Publication title:
Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
572
Pub. Year:
1999
Page(from):
225
Pub. info.:
Warrendale, PA: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558994799 [1558994793]
Language:
English
Call no.:
M23500/572
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Blue emission in Mg doped CaN studied by time-resolved spectroscopy

Seitz,R., Gaspar,C., Monteiro,T., Pereira,E., Leroux,M., Beaumont,B., Gibart,P.

Trans Tech Publications
7 Conference Proceedings Cathodoluminescence of Cubic GaN Epilayers

Wang,C., As,D.J., Schikora,D., Schottker,B., Lischka,K.

Trans Tech Publications
2 Conference Proceedings Mechanisms of Optical Gain in Cubic GaN and InGaN

Holst, J., Hoffmann, A., Broser, I., Frey, T., Schottker, B., As, D. J., Schikora, D., Lischka, K.

MRS - Materials Research Society
8 Conference Proceedings p- and n-Type Doping of MBE Grown Cubic GaN/GaAs Epilayers

As, D. J., Simonsmeier, T., Busch, J., Schottker, B., Lubbers, M., Mimkes, J., Schikora, D., Lischka, K., Kriegseis, W., …

MRS - Materials Research Society
3 Conference Proceedings Depth-Resolved and Excitation Power Dependent Cathodo-luminescence of MBE-Grown Cubic GaN Epilayers

As, D. J., Schottker, C. Wang. B., Schikora, D., Lischka, K.

MRS - Materials Research Society
9 Conference Proceedings Optical and electrical properties of MBE grown cubic GaN/GaAs epilayers doped by Si

As, D. J., Richter, A., Busch, J., Schottker, B., Lubbers, M., Mimkes, J., Schikora, D., Lischka, K., Kriegseis, W., …

MRS-Materials Research Society
4 Conference Proceedings Optical Properties of MBE Grown Cubic AlGaN Epilayers and AlGaN/GaN Quantum Well Structures

As, D.J., Frey, T., Bartels, M., Khartchenko, A., Schikora, D., Lischka, K., Goldhahn, R., Shokhovets, S.

Materials Research Society
10 Conference Proceedings Micro-Raman and Electron Microscopy Analysis of Cubic GaN Layers on(001)GaAs

Tabata,A., Enderlein,R., Lima,A.P., Leite,J.R., Lemos,V., Kaiser,S., Schikora,D., Schottker,B., Kohler,U., Lischka,K.

Trans Tech Publications
5 Conference Proceedings Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers

Seitz, R., Gaspar, C., Monteiro, T., Pereira, E., Poisson, M. A., Beaumont, B.

MRS-Materials Research Society
11 Conference Proceedings An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN

Schottker,B., Kuhler,J., As,D.J., Schikora,D., Lischka,K.

Trans Tech Publications
6 Conference Proceedings Electrical properties of cubic InN and GaN epitaxial layers as function of temperature

Fernandez, J. R. L., Chitta, V. A., Abramof, E., Silva, A. Ferreira da, Leite, J. R., Tabata, A., As, D. J., Frey, T., …

MRS-Materials Research Society
12 Conference Proceedings Epitaxial growth and properties of cubic group-III nitride layers

Schikora,D., Schottger,B., As,D.J., Lischka,K.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12