Annealing effects of schottky contacts on the characteristics of 4H-SiC schottky barrier diodes

Annealing effects of schottky contacts on the characteristics of 4H-SiC schottky barrier diodes

Author(s):

Publication title:

Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

572

Pub. Year:

1999

Page(from):

141

Pub. info.:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994799 [1558994793]

Language:

English

Call no.:

M23500/572

Type:

Conference Proceedings

Details

TDL ID:	ZA00018972
Series ID:	PA00000011
Conf. info. (Name):	Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 : Symposium
Conf. info. (Number):	1999
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1999.04.05-1999.04.08

Similar Items:

1 Conference Proceedings Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode H.J. Jung, S.B. Yun, I.H. Kang, J.H. Moon, W.J. Kim Trans Tech Publications	7 Conference Proceedings Study of 4H-SiC Junction Barrier Schottky(JBS) Diode Using Various Junction Structures K.H. Kim, Y.H. Kang, J.H. Lee, E.S. Jung, I.H. Kang Trans Tech Publications
2 Conference Proceedings A Study of Post Annealing Effects in the Repair of High Resistance Failures with Unstable Schottky Barrier Height in 4H-SiC Schottky Barrier Diode S.S. Kyoung, E.S. Jung, T.Y. Kang, C.H. Yang, M.Y. Sung Trans Tech Publications	8 Conference Proceedings Modification of Surface Layer during High Temperature Annealing and its Effects on the SiC Diode Characteristics W. Bahng, H.J. Cheong, I.H. Kang, S.J. Kim, S.C. Kim, S.J. Joo, N.K. Kim Trans Tech Publications
3 Conference Proceedings Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments Kim, D.H., Na, H.J., Jung, S.Y., Song, I.B., Um, M.Y., Song, H.K., Jeong, J.K., Lee, J.B., Kim, H.J. Trans Tech Publications	9 Conference Proceedings EFFECTS OF INTERFACES ON THE a-Si:H SCHOTTKY BARRIER CHARACTERISTICS Li, Y. M., Malone, C., Kumar, S., Wronski, C. R., Nguyen, H. V., Collins, R W. Materials Research Society
4 Conference Proceedings Effects of Interface Structure on the Electrical Characteristics of PtSi-Si Schottky Barrier Contacts Tsaur, B. -Y., Silversmith, D. J., Mountain, R. W., Anderson Jr., C. H. North-Holland	10 Conference Proceedings Metal Work-function and Doping-Concentration Dependent Barrier Height of Ni-Contacts to 4H-SiC with Metal-Embedded Nano-Particles M.S. Kang, J.H. Lee, A. Hallén, C.M. Zetterling, W. Bahng Trans Tech Publications
5 Conference Proceedings Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation … I.H. Kang, J.Y. Song, S.J. Joo, W. Bahng, S.C. Kim Trans Tech Publications	11 Conference Proceedings Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics S. Yang, Q.W. Song, X.Y. Tang, Y.M. Zhang, H. Yuan, Q.J. Sun Trans Tech Publications
6 Conference Proceedings Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode I.H. Kang, W. Bahng, S.J. Joo, S.C. Kim, N.K. Kim Trans Tech Publications	12 Conference Proceedings 4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts D. Perrone, M. Naretto, S. Ferrero, L. Scaltrito, C.F. Pirri Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12