Bias-temperature-stress induced mobility improvement in 4H-SiC MOSFETs
- Author(s):
- Publication title:
- Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 572
- Pub. Year:
- 1999
- Page(from):
- 63
- Pub. info.:
- Warrendale, PA: MRS-Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994799 [1558994793]
- Language:
- English
- Call no.:
- M23500/572
- Type:
- Conference Proceedings
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