*Gate technology issues for silicon MOS nanotransistors | 東京工業大学附属図書館文献データベース

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*Gate technology issues for silicon MOS nanotransistors

Author(s):

Publication title:

Materials issues and modeling for device nanofabrication : symposia held November 29-December 2, 1999, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

584

Pub. Year:

2000

Page(from):

283

Pub. info.:

Warrendale, Pa.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994928 [1558994920]

Language:

English

Call no.:

M23500/584

Type:

Conference Proceedings

Details

TDL ID:	ZA00018971
Series ID:	PA00000011
Conf. info. (Name):	Materials Issues and Modeling for Device Nanofabrication : Symposium
Conf. info. (Number):	1999
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1999.11.30-1999.12.02

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