Improved characteristic temperature (T0) of a 1.3ｦﾌm GaInNAs/GaAs single-quantum-well laser diode through thermal annealing

Improved characteristic temperature (T0) of a 1.3ｦﾌm GaInNAs/GaAs single-quantum-well laser diode through thermal annealing

Author(s):

Publication title:

Thin films for optical waveguide devices and materials for optical limiting : symposium held November 30-December 3, 1999, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

597

Pub. Year:

2000

Page(from):

33

Pub. info.:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995055 [1558995056]

Language:

English

Call no.:

M23500/597

Type:

Conference Proceedings

Details

TDL ID:	ZA00018970
Series ID:	PA00000011
Conf. info. (Name):	Thin Films for Optical Waveguide Devices and Materials for Optical Limiting : Symposium
Conf. info. (Number):	1999
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1999.11.30-1999.12.03

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