INITIATION AND EVOLUTION OF EPITAXIAL GROWTH OF GaAs ON CaF2/Si(111) SUBSTRATES
- Author(s):
- Publication title:
- Mechanisms of thin film evolution
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 317
- Pub. Year:
- 1994
- Page(from):
- 59
- Pub. info.:
- Pittsburgh, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992160 [1558992162]
- Language:
- English
- Call no.:
- M23500/317
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
Materials Research Society |
2
Conference Proceedings
Ge NANOCRYSTALS GROWN ON Si(111) BY MOLECULAR BEAM EPITAXY WITH AND WITHOUT CaF2 BUFFER LAYERS
MRS - Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
Materials Research Society |
10
Conference Proceedings
TEMPERATURE DEPENDENCE OF THE ELECTRICAL PROPERTIES OF EPITAXIAL CaF2 LAYERS ON Si (111)
Materials Research Society |
5
Conference Proceedings
The Effect of Substrate Misorientation on the Evolution of Surface Morphology in Epitaxially Grown CaF2/Si(111) Heterostructures
MRS - Materials Research Society |
11
Conference Proceedings
ESTIMATION OF SURFACE DIFFUSION LENGTH FROM AFM IMAGES OF FACETED GaAs(111) HOMOEPITAXIAL FILMS
Materials Research Society |
6
Conference Proceedings
The Effect of Strain Relaxation Mechanisms on the Electrical Properties of Epitaxial CaF2/Si(111) Heterostructures
MRS - Materials Research Society |
Materials Research Society |