Surface Termination of the Ge(100) and Si(100) Surfaces by Using DHF Solution Dipping

Surface Termination of the Ge(100) and Si(100) Surfaces by Using DHF Solution Dipping

Author(s):

Publication title:

III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

535

Pub. Year:

1999

Page(from):

281

Pub. info.:

Warrendale, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994416 [1558994416]

Language:

English

Call no.:

M23500/535

Type:

Conference Proceedings

Details

TDL ID:	ZA00018919
Series ID:	PA00000011
Conf. info. (Name):	Symposium on II-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics
Conf. info. (Number):	1998
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1998.11.30-1998.12.03

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