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Fermi-Level Effect and Junction Carrier Concentration Effect on Boron Distribution in GexSi1-x/Si Heterostructures

Author(s):
Publication title:
III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
535
Pub. Year:
1999
Page(from):
275
Pub. info.:
Warrendale, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994416 [1558994416]
Language:
English
Call no.:
M23500/535
Type:
Conference Proceedings

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