3.2 and 3.8 ｦﾌm Emission and Lasing in AlGaAsSb/InGaAsSb Double Heterostructures With Asymmetric Band Offset Confinements

3.2 and 3.8 ｦﾌm Emission and Lasing in AlGaAsSb/InGaAsSb Double Heterostructures With Asymmetric Band Offset Confinements

Author(s):

Mikhailova, M. P.

Publication title:

Infrared applications of semiconductors II : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

484

Pub. Year:

1998

Page(from):

101

Pub. info.:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993891 [1558993894]

Language:

English

Call no.:

M23500/484

Type:

Conference Proceedings

Details

TDL ID:	ZA00018914
Series ID:	PA00000011
Conf. info. (Name):	Symposium on infrared applications of semiconductors
Conf. info. (Number):	2nd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1997.12.01-1997.12.04

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