Role of SiH2 in 1H NMR of ヲフc-Si:H Deposited with Different Plasma Excitation Frequencies and Silane Concentrations
- Author(s):
- Publication title:
- Advances in microcrystalline and nanocrystalline semiconductors, 1996 : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 452
- Pub. Year:
- 1997
- Page(from):
- 791
- Pub. info.:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993563 [1558993568]
- Language:
- English
- Call no.:
- M23500/452
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
1H NMR in ヲフc-Si:H Deposited with Different Plasma Excitation Frequencies and Silane Concentrations
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
8
Conference Proceedings
Polarizers at 1.053 ヲフm deposited on silica substrate for high-laser-flux applications in a vacuum
SPIE-The International Society for Optical Engineering |
3
Conference Proceedings
Comparison in the growth and properties of RF sputtered ヲフc-Si:H and glow discharge-chemical vapor deposited ヲフc-Si:H films
MRS - Materials Research Society |
SPIE - The International Society for Optical Engineering |
4
Conference Proceedings
Preparation of Microcrystalline Silicon with the Layer-by-Layer Technique at Various Plasma Excitation Frequencies
MRS - Materials Research Society |
10
Conference Proceedings
Tunable single-frequency III-V semiconductor diode lasers with wavelengths from 0.76 to 2.7 ヲフm
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
6
Conference Proceedings
High-brightness tapered laser sources in the 1.3- to 2.0-ヲフm wavelength range
SPIE - The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |