Limits and Properties of Size Quantization Effects in InAs Self-Assembled Quantum Dots
- Author(s):
- Publication title:
- Advances in microcrystalline and nanocrystalline semiconductors, 1996 : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 452
- Pub. Year:
- 1997
- Page(from):
- 275
- Pub. info.:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993563 [1558993568]
- Language:
- English
- Call no.:
- M23500/452
- Type:
- Conference Proceedings
Similar Items:
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
MRS - Materials Research Society |
MRS-Materials Research Society |
Electrochemical Society |
Materials Research Society |
4
Conference Proceedings
Growth and properties of self assembling quantum dots in III/V compound semiconductors
Kluwer Academic Publishers |
10
Conference Proceedings
Temperature-dependence photoreflectance study of InAs/GaAs self-assembled quantum dots
SPIE-The International Society for Optical Engineering |
5
Conference Proceedings
Charge separation between strain coupled quantum dots in a self-assembled InAs quantum dot structure
MRS-Materials Research Society |
SPIE - The International Society for Optical Engineering |
6
Conference Proceedings
Finite carrier confinement and biexcitonic complexes in self-assembled InAs quantum dots
MRS-Materials Research Society |
12
Conference Proceedings
Time-resolved photoluminescence measurements of InAs self-assembled quantum dots (Invited Paper)
SPIE - The International Society of Optical Engineering |