A Relationship Between Interface Trap Density and Transconductance in 6H-SiC Enhancement Mode Field Effect Transistors

A Relationship Between Interface Trap Density and Transconductance in 6H-SiC Enhancement Mode Field Effect Transistors

Author(s):

Publication title:

Covalent ceramics III - science and technology of non-oxides : symposium held November 27-30, 1995, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

410

Pub. Year:

1996

Page(from):

69

Pub. info.:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993136 [1558993134]

Language:

English

Call no.:

M23500/410

Type:

Conference Proceedings

Details

TDL ID:	ZA00018907
Series ID:	PA00000011
Conf. info. (Name):	Symposium on covalent ceramics
Conf. info. (Number):	3rd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1995.11.27-1995.11.30

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