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A PROPOSED REGROWTH MECHANISM FOR THE ENHANCEMENT OF SCHOTTKY BARRIER HEIGHT TO n-GaAs

Author(s):
Publication title:
Advanced metallization for devices and circuits--science, technology, and manufacturability : symposium held April 4-8, 1994, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
337
Pub. Year:
1994
Page(from):
313
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992375 [1558992375]
Language:
English
Call no.:
M23500/337
Type:
Conference Proceedings

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