Study of a Li- and C-related center formed at high annealing temperatures in neutron-irradiated FZ silicon doped with Li

Study of a Li- and C-related center formed at high annealing temperatures in neutron-irradiated FZ silicon doped with Li

Author(s):

Publication title:

Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997

Title of ser.:

Materials science forum

Ser. no.:

258-263

Pub. Year:

1997

Vol.:

Part1

Page(from):

635

Page(to):

640

Pub. info.:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497874 [0878497870]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00018828
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects in Semiconductors
Conf. info. (Number):	19th
Conf. info. (Venue):	Aveiro, Portugal
Conf. info. (Date):	1997.07.00

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