ZnSe-based light emitters grown on wide-gap III-V buffer layers (Invited Paper)

Author(s):

Uusimaa,P. ( Tampere Univ.of Technology (Finland) )

Salokatve,A. ( Tampere Univ.of Technology (Finland) )

Savolainen,P. ( Tampere Univ.of Technology (Finland) )

Rinta-Moykky,A. ( Tampere Univ.of Technology (Finland) )

Pessa,M. ( Tampere Univ.of Technology (Finland) )

Souifi,A. ( Institute National des Sciences Appliquees de Lyon (France) )

Adhiri,R. ( Institute National des Sciences Appliquees de Lyon( France) )

Kiriakidis,G. ( Institute of Electronic Structure and Laser/Foundation for Research and Technology-Hellas (Greece) )

Moschovis,K. ( Institute of Electronic Structure and Laser/Foundation for Research and Technology-Hellas (Greece) )

Stoimenos,J. ( Univ.of Thessaloniki (Greece) )

5 more

Publication title:

Physics and Simulation of Optoelectronic Devices VI

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3283

Pub. Year:

1998

Vol.:

Part 1

Page(from):

39

Page(to):

50

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819427229 [0819427225]

Language:

English

Call no.:

P63600/3283

Type:

Conference Proceedings