ZnSe-based light emitters grown on wide-gap III-V buffer layers (Invited Paper)
- Author(s):
Uusimaa,P. ( Tampere Univ.of Technology (Finland) ) Salokatve,A. ( Tampere Univ.of Technology (Finland) ) Savolainen,P. ( Tampere Univ.of Technology (Finland) ) Rinta-Moykky,A. ( Tampere Univ.of Technology (Finland) ) Pessa,M. ( Tampere Univ.of Technology (Finland) ) Souifi,A. ( Institute National des Sciences Appliquees de Lyon (France) ) Adhiri,R. ( Institute National des Sciences Appliquees de Lyon( France) ) Kiriakidis,G. ( Institute of Electronic Structure and Laser/Foundation for Research and Technology-Hellas (Greece) ) Moschovis,K. ( Institute of Electronic Structure and Laser/Foundation for Research and Technology-Hellas (Greece) ) Stoimenos,J. ( Univ.of Thessaloniki (Greece) ) - Publication title:
- Physics and Simulation of Optoelectronic Devices VI
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 3283
- Pub. Year:
- 1998
- Vol.:
- Part 1
- Page(from):
- 39
- Page(to):
- 50
- Pub. info.:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819427229 [0819427225]
- Language:
- English
- Call no.:
- P63600/3283
- Type:
- Conference Proceedings
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