Concentration and Depth Measurements of Boron in Semiconductor Materials Using Neutron Depth Profiling

Concentration and Depth Measurements of Boron in Semiconductor Materials Using Neutron Depth Profiling

Author(s):

Publication title:

Proceedings of the Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3322

Pub. Year:

1997

Page(from):

458

Page(to):

469

Pub. info.:

Pennington, NJ: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819427656 [0819427659]

Language:

English

Call no.:

P63600/3322

Type:

Conference Proceedings

Details

TDL ID:	ZA00018778
Series ID:	PA00000029
Conf. info. (Name):	Symposium on Diagnostic Techniques for Semiconductor Materials and Devices
Conf. info. (Number):	1997
Conf. info. (Venue):	Montréal, QC, Canada
Conf. info. (Date):	1997.05.06-1997.05.08

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