Advances in characterizing SiON for 0.18-and 0.25-ｦﾌm technologies

Advances in characterizing SiON for 0.18-and 0.25-ｦﾌm technologies

Author(s):

Forouhi,A.R. ( n&k Technology,Inc. )
Li,G.G. ( n&k Technology,Inc. )
Bloomer,I. ( n&k Technology,Inc. )

Publication title:

Metrology, inspection, and process control for microlithography XII : 23-25 February 1998, San Clara, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3332

Pub. Year:

1998

Page(from):

493

Page(to):

500

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819427779 [0819427772]

Language:

English

Call no.:

P63600/3332

Type:

Conference Proceedings

Details

TDL ID:	ZA00018777
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Metrology,Inspection, and Process Control for Microlithograph
Conf. info. (Number):	1998 : 12th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	1998.02.23-1998.02.25

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