Diffusion of Si in GaAs from a thin Si film by pulsed laser irradiation

Diffusion of Si in GaAs from a thin Si film by pulsed laser irradiation

Author(s):

Nissim, Y.I. ( Stanford Electronics Laboratories )

Greiner, M. ( Stanford Electronics Laboratories )

Falster, R.J. ( Stanford Electronics Laboratories )

Gibbons, J.F. ( Stanford Electronics Laboratories )

Chye, P. ( Avantek )

Huang, C. ( Avantek )

1 more

Publication title:

Laser and electron-beam interactions with solids : proceedings of the Materials Research Society Annual Meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposia proceedings

Ser. no.:

4

Pub. Year:

1982

Page(from):

677

Page(to):

681

Pub. info.:

New York: North Holland

ISSN:

02729172

ISBN:

9780444006936 [0444006931]

Language:

English

Call no.:

M23500/4

Type:

Conference Proceedings

Details

TDL ID:	ZA00018762
Series ID:	PA00000010
Conf. info. (Name):	Materials Research Society Annual Meeting
Conf. info. (Number):	1981
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1981.11.16-1981.11.19

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