Pulsed X-ray annealing of arsenic-implanted silicon

Pulsed X-ray annealing of arsenic-implanted silicon

Author(s):

Sigmon, T.W. ( Stanford Electronics Laboratories )
Osias, D.E. ( Physics International Company )
Scheider, R.L. ( Physics International Company )
Gilman, C. ( Physics International Company )
Dahlbacka, G. ( Physics International Company )

Publication title:

Laser and electron-beam interactions with solids : proceedings of the Materials Research Society Annual Meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposia proceedings

Ser. no.:

4

Pub. Year:

1982

Page(from):

281

Page(to):

286

Pub. info.:

New York: North Holland

ISSN:

02729172

ISBN:

9780444006936 [0444006931]

Language:

English

Call no.:

M23500/4

Type:

Conference Proceedings

Details

TDL ID:	ZA00018762
Series ID:	PA00000010
Conf. info. (Name):	Materials Research Society Annual Meeting
Conf. info. (Number):	1981
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1981.11.16-1981.11.19

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